FGA25N120AN Fairchild Semiconductor, FGA25N120AN Datasheet - Page 2

• Manufacturer Part Number: FGA25N120AN
• Description: Npt Technology Igbt
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
Off Characteristics
BV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
L
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
Symbol
e
B
T
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
J
VCES
CES
/
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
Parameter
V
V
V
V
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
Measured 5mm from PKG
I
I
I
T
I
C
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
C
= 25A
= 25A
= 40A
= 25mA, V
= 10 , V
= 10 , V
= 125 C
= V
= 30V
= 600 V, I
= 0V, I
= 0V, I
= V
= 600 V, I
= 600 V, I
= 15V
T
Test Conditions
C
= 25 C unless otherwise noted
CES
GES
,
,
,
,
C
C
V
, V
, V
V
V
V
GE
GE
GE
= 3mA
= 3mA
CE
GE
GE
GE
C
C
C
GE
CE
= 15V,
= 15V,
= 0V,
= 25A,
= 25A,
= 25A,
= V
= 15V
= 15V,
= 15V
C
C
= 0V
= 0V
= 25 C
= 125 C
GE
1200
Min.
3.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2100
Typ.
180
170
180
200
105
0.6
5.5
2.5
2.9
3.1
4.8
1.0
5.7
5.5
1.4
6.9
90
60
60
45
60
60
70
15
14
--
--
--
± 100
Max.
300
160
7.5
3.2
7.2
1.5
8.7
90
23
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3
FGA25N120AN Rev. A
Units
V/ C
mA
mJ
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
nH
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V