FGA25N120AN Fairchild Semiconductor, FGA25N120AN Datasheet - Page 5

• Manufacturer Part Number: FGA25N120AN
• Description: Npt Technology Igbt
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
0.01
0.1
100
10
0.1
10
1
1
10
0.1
Common Emitter
V
T
T
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
Ic MAX (Pulsed)
C
C
GE
= 25
= 125
=  15V, R
Collector - Emitter Voltage, V
20
1
1E-3
0.01
Collector Current, I
o
G
0.1
C
10
= 10
1
1E-5
0.2
0.1
0.05
0.02
0.01
0.5
10
30
DC Operation
single pulse
Fig 17. Transient Thermal Impedance of IGBT
1E-4
C
[A]
100
40
1ms
CE
[V]
100 s
Eon
Eoff
1000
50 s
1E-3
Rectangular Pulse Duration [sec]
50
0.01
Fig 14. Gate Charge Characteristics
Fig 16. Turn-Off SOA
100
16
14
12
10
10
8
6
4
2
0
1
0
1
Common Emitter
R
T
C
L
= 24
= 25
20
0.1
Vcc = 200V
40
Collector-Emitter Voltage, V
60
10
Gate Charge, Q
Pdm
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + T
Duty factor D = t1 / t2
Peak Tj = Pdm
Safe Operating Area
V
GE
80
= 15V, T
1
t1
t1
100
t2
t2
C
120
= 125
Zthjc + T
100
g
[nC]
140
C
C
10
CE
160
[V]
400V
600V
180
1000
FGA25N120AN Rev. A
200