FGA25N120AN Fairchild Semiconductor, FGA25N120AN Datasheet - Page 3

• Manufacturer Part Number: FGA25N120AN
• Description: Npt Technology Igbt
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
Fig 5. Saturation Voltage vs. V
180
160
140
120
100
80
60
40
20
4.0
3.5
3.0
2.5
2.0
20
16
12
0
8
4
0
25
0
0
T
Common Emitter
T
C
Common Emitter
V
Temperature at Variant Current Level
C
= 25
GE
= 25
= 15V
Collector-Emitter Voltage, V
2
4
Gate-Emitter Voltage, V
50
Case Temperature, T
I
C
= 12.5A
4
8
25A
40A
75
20V
12
6
17V
C
GE
15V
[  ]
GE
CE
I
100
[V]
C
= 25A
[V]
16
8
40A
V
GE
= 10V
12V
125
10
20
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
120
100
50
40
30
20
10
80
60
40
20
20
16
12
0
0
8
4
0
0.1
0
0
Common Emitter
V
T
T
Duty cycle : 50%
Tc = 100
Powe Dissipation = 60W
Common Emitter
T
GE
C
C
C
= 25
= 125
= 125
= 15V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
1
I
C
2
= 12.5A
Frequency [kHz]
8
Vcc = 600V
load Current : peak of square wave
25A
40A
10
12
4
GE
GE
CE
100
[V]
[V]
16
FGA25N120AN Rev. A
1000
20
6