FGA25N120AN Fairchild Semiconductor, FGA25N120AN Datasheet - Page 4

• Manufacturer Part Number: FGA25N120AN
• Description: Npt Technology Igbt
• Manufacturer: Fairchild Semiconductor

©2004 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
Fig 9. Turn-Off Characteristics vs.
4000
3500
3000
2500
2000
1500
1000
1000
100
500
100
10
0
10
1
0
Common Emitter
V
T
T
Gate Resistance
Common Emitter
V
I
T
T
C
C
GE
C
C
C
Collector Current
CC
= 25
= 125
= 25A
= 25
= 125
=  15V, R
= 600V, V
10
Coss
Crss
Ciss
Collector-Emitter Voltage, V
20
20
Collector Current, I
GE
Gate Resistance, R
G
= 10
=  15V
30
30
40
C
G
[A]
10
Common Emitter
V
T
[ ]
C
GE
50
= 25
CE
40
= 0V, f = 1MHz
[V]
td(on)
td(off)
60
tr
tf
50
70
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
Fig 8. Turn-On Characteristics vs. Gate
100
100
10
10
1
10
0
0
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
C
C
C
C
GE
CC
Resistance
= 25A
= 25
= 125
= 25
= 125
Collector Current
=  15V, R
= 600V, V
10
tr
10
td(on)
20
20
GE
Gate Resistance, R
20
Collector Current, I
Gate Resistance, R
G
=  15V
= 10
30
30
30
40
40
Common Emitter
V
I
T
T
C
CC
C
C
= 25A
= 25
= 125
= 600V, V
C
G
G
[A]
[ ]
[ ]
50
50
40
GE
=  15V
60
td(off)
60
tf
Eon
Eoff
FGA25N120AN Rev. A
70
50
70