MT28F004B3VG-10 TET

Manufacturer Part NumberMT28F004B3VG-10 TET
DescriptionFlash Memory, 4Mbit, Sectored, 3.3V Supply, TSOP I, 40-Pin
ManufacturerMicron
MT28F004B3VG-10 TET datasheet
 


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FLASH MEMORY
FEATURES
• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V V
CC
3.3V ±0.3V V
application programming
PP
5V ±10% V
application/production
PP
programming
12V ±5% V
compatibility production
PP
programming
• Address access times: 90ns, 100ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
• TSOP and SOP packaging options
OPTIONS
• Timing
90ns access
100ns access
• Configurations
512K x 8
256K x 16/512K x 8
• Boot Block Starting Word Address
Top (3FFFFH)
Bottom (00000H)
• Operating Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
• Packages
Plastic 44-pin SOP (600 mil)
Plastic 48-pin TSOP Type 1
(12mm x 20mm)
Plastic 40-pin TSOP Type 1
(10mm x 20mm)
Part Number Example:
MT28F400B3SG-9 T
4Mb Smart 3 Boot Block Flash Memory
F45_1.p65 – Rev. 1/01
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
SMART 3 BOOT BLOCK FLASH MEMORY
MT28F004B3
MT28F400B3
3V Only, Dual Supply (Smart 3)
40-Pin TSOP Type I 48-Pin TSOP Type I
GENERAL DESCRIPTION
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash), pro-
grammable, read-only memories containing 4,194,304
bits organized as 262,144 words (16 bits) or 524,288
MARKING
bytes (8 bits). Writing or erasing the device is done with
either a 3.3V or 5V V
performed with a 3.3V V
-9
advances, 5V V
-10 ET
tion programming. For backward compatibility with
SmartVoltage technology, 12V V
MT28F004B3
maximum of 100 cycles and may be connected for up
MT28F400B3
to 100 cumulative hours. These devices are fabricated
with Micron’s advanced CMOS floating-gate process.
T
The MT28F004B3 and MT28F400B3 are organized
B
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
None
boot block. Writing or erasing the boot block requires
ET
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
SG
write or erase sequences. This block may be used to store
WG
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
VG
erased with no additional security measures.
Please refer to Micron’s Web site
products/datasheets/flashds.html) for the latest data
sheet.
1
4Mb
44-Pin SOP
voltage, while all operations are
PP
. Due to process technology
CC
is optimal for application and produc-
PP
is supported for a
PP
(www.micron.com/
©2000, Micron Technology, Inc.

MT28F004B3VG-10 TET Summary of contents

  • Page 1

    ... Part Number Example: MT28F400B3SG-9 T 4Mb Smart 3 Boot Block Flash Memory F45_1.p65 – Rev. 1/01 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. SMART 3 BOOT BLOCK FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply (Smart 3) 40-Pin TSOP Type I 48-Pin TSOP Type I ...

  • Page 2

    ... A8 8 WE WP# 12 A18 ORDER NUMBER AND PART MARKING MT28F004B3VG-9 B MT28F004B3VG-9 T MT28F004B3VG-10 BET MT28F004B3VG-10 TET 2 44-Pin SOP WP A17 ...

  • Page 3

    ... State Machine Y - Decoder Y - Select Gates Sense Amplifiers V Write/Erase-Bit PP Switch/ Compare and Verify Pump Status Identification Register Register Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 4Mb Input 8 Buffer Input 7 Buffer Input Buffer A-1 Input Data DQ15/( Latch/Mux 16 DQ8-DQ14 ...

  • Page 4

    ... Supply Power Supply: +3.3V ±0.3V Supply Ground – No Connect: These pins may be driven or left unconnected. is supported for a maximum of 100 cycles and may PP Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 DESCRIPTION 1 (5V (12V) and RP PPH PPH ...

  • Page 5

    ... (“Don’t Care”). IL IH (12V). PPH Micron Technology, Inc., reserves the right to change products or specifications without notice DQ0-DQ7 DQ8-DQ14 DQ15/A High-Z High High-Z High Data-Out Data-Out Data-Out ...

  • Page 6

    ... PPH Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb DQ0-DQ7 PP High-Z High-Z Data-Out High-Z 20H D0H 10H/40H Data-In FFH 20H D0H D0H 10H/40H Data-In Data-In FFH 89H ...

  • Page 7

    ... ERASE task and when an ERASE has been suspended. Additional error information is set in three other bits: V status, write status and erase status pin before a WRITE or ERASE PP voltage be present on the PP Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb voltage PP or when HH ©2000, Micron Technology, Inc. ...

  • Page 8

    ... WRITE or ERASE of the boot block, the RP# pin must be held WRITE is completed. The V (3.3V or 5V) when the boot block is written to or erased. Figure 1 Memory Address Maps Micron Technology, Inc., reserves the right to change products or specifications without notice the WP# pin held HIGH until the ERASE HH pin must ...

  • Page 9

    ... A9 pin. Using this method, ID the ID register can be read while the device is in any mode. Once A9 is returned to V return to the previous mode. Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 4Mb the device will IL IH © ...

  • Page 10

    ... When the device is in this mode, only READ STATUS REGISTER, READ ARRAY and ERASE RESUME commands may be executed Writing to the boot block also PPH 1 PPH 2 or WP# be HIGH. A0- HH Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb must be PP ©2000, Micron Technology, Inc. ...

  • Page 11

    ... V sampled for 3. after WRITE or ERASE CONFIRM is given must be cleared by CLEAR STATUS REGISTER RESET. PP Reserved for future use. Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 4Mb status bits must be cleared PP status bit PP voltage ...

  • Page 12

    ... WRITE X 2 WRITE X 2 WRITE X 2 WRITE X Micron Technology, Inc., reserves the right to change products or specifications without notice Writing to the boot block also requires that the or that the WP# pin brought until the WRITE is completed PPH 2ND CYCLE FFH 90H ...

  • Page 13

    ... Status Register Error Decode voltage error voltage not valid at time of WRITE PP voltage not valid at time of ERASE CONFIRM PP voltage error, with WRITE and ERASE errors Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb or the WP set PPH PP status bit PP © ...

  • Page 14

    ... CC . When CE (3.3V Address Data NOTE goes HIGH. Power-Up/Reset Timing Diagram Micron Technology, Inc., reserves the right to change products or specifications without notice valid CC -GND-V CC Note VALID VALID t RWH UNDEFINED must be within the valid operating range before RP# ...

  • Page 15

    ... Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER. 4Mb Smart 3 Boot Block Flash Memory F45_1.p65 – Rev. 1/01 SMART 3 BOOT BLOCK FLASH MEMORY COMPLETE WRITE STATUS-CHECK 1 Start (WRITE completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 SEQUENCE SR3 = 0? V Error PP YES ...

  • Page 16

    ... COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE NO SR3 = 0? V Error PP YES YES SR4 Command Sequence Error NO NO SR5 = 0? BLOCK ERASE Error YES ERASE Successful Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb ©2000, Micron Technology, Inc. ...

  • Page 17

    ... SUSPEND 3. STATUS REGISTER READ NO SR7 = 1? YES NO SR6 = 1? YES WRITE FFH (READ ARRAY) Done NO Reading? YES WRITE D0H (ERASE RESUME) Resume ERASE 17 ERASE Completed Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb ©2000, Micron Technology, Inc. ...

  • Page 18

    ... OH V – 0. – 500 ID I – 500 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb NOTES UNITS NOTES µA µA µA µA ©2000, Micron Technology, Inc. ...

  • Page 19

    ... MAX UNITS NOTES 100 ± Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb UNITS NOTES µA µA µA µA ©2000, Micron Technology, Inc. ...

  • Page 20

    ... MAX MIN MAX 90 100 90 100 100 1,000 1,000 150 150 t ACE is affected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb = +3.3V ±0.3V UNITS NOTES ©2000, Micron Technology, Inc. ...

  • Page 21

    ... 100 VALID DATA -9 MIN MAX MIN 1,000 25 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb DON’T CARE UNDEFINED -10 ET MAX UNITS 1,000 ©2000, Micron Technology, Inc. ...

  • Page 22

    ... 100 VALID DATA -9 MIN MAX MIN 1,000 25 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb DON’T CARE UNDEFINED -10 ET MAX UNITS 1,000 ©2000, Micron Technology, Inc. ...

  • Page 23

    ... 200 200 supported for a maximum of 100 cycles and may PP plus read current if a READ Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb = +3.3V ±0. +3.3V ±0.3V UNITS NOTES ...

  • Page 24

    ... +85°C -10 ET MIN MAX MIN MAX 90 100 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb = +3.3V ±0.3V UNITS NOTES ©2000, Micron Technology, Inc. ...

  • Page 25

    ... Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb = +3.3V ±0.3V NOTES ©2000, Micron Technology, Inc. ...

  • Page 26

    ... TYP MAX TYP MAX UNITS NOTES 0.5 7 0.5 7 2.8 14 1.5 14 1.5 – 1 – 1.5 – 1 – Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb = +3.3V ±0.3V NOTES ...

  • Page 27

    ... MIN MAX 100 1,000 1,000 200 6 300 300 600 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb CMD in DON’T CARE -10 ET MIN MAX UNITS 100 ns ns 200 ns 6 µs ...

  • Page 28

    ... MIN MAX 100 1,000 1,000 200 6 300 300 600 200 0 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb CMD in DON’T CARE -10 ET MIN MAX UNITS 100 ns ns 200 ns 6 µs ...

  • Page 29

    ... MAX GAGE PLANE .010 (0.25) .0315 (0.80) MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 29 4Mb SEE DETAIL A .016 (0.40) .010 (0.25) DETAIL A (ROTATED 90 CW) .066 (1.72) ©2000, Micron Technology, Inc. ...

  • Page 30

    ... SMART 3 BOOT BLOCK FLASH MEMORY 48-PIN PLASTIC TSOP I (12mm x 20mm) .795 (20.19) .780 (19.81) .727 (18.47) .721 (18.31 SEE DETAIL A .047 (1.20) MAX MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. 30 .010 (0.25) .475 (12.07) .469 (11.91) .010 (0.25) .004 (0.10) .008 (0.20) .002 (0.05) .0315 (0.80) DETAIL A ©2000, Micron Technology, Inc. ...

  • Page 31

    ... SEE DETAIL A MIN 31 .010 (0.25) .397 (10.08) .391 (9.93) .004 (0.10) MAX .008 (0.20) .002 (0.05) DETAIL A .0315 (0.80) Micron Technology, Inc., reserves the right to change products or specifications without notice. 4Mb .010 (0.25) GAGE PLANE .024 (0.60) .016 (0.40) ©2000, Micron Technology, Inc. ...