MT28F004B3VG-10 TET Micron, MT28F004B3VG-10 TET Datasheet - Page 14

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MT28F004B3VG-10 TET

Manufacturer Part Number
MT28F004B3VG-10 TET
Description
Flash Memory, 4Mbit, Sectored, 3.3V Supply, TSOP I, 40-Pin
Manufacturer
Micron
Datasheet
WRITE/ERASE CYCLE ENDURANCE
and fabricated to meet advanced firmware storage re-
quirements. To ensure this level of reliability, V
be at 3.3V ±0.3V or 5V ±10% during WRITE or ERASE
cycles. For SmartVoltage-compatible production pro-
gramming, 12V V
cycles and may be connected for up to 100 cumulative
hours. Operation outside these limits may reduce the
number of WRITE and ERASE cycles that can be per-
formed on the device.
POWER USAGE
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down mode
is enabled by bringing RP# LOW. Current draw (I
this mode is a maximum of 8µA at 3.3V V
is HIGH, the device will enter standby mode. In this
mode, maximum I
CE# is brought HIGH during a WRITE or ERASE, the ISM
will continue to operate, and the device will consume
the respective active power until the WRITE or ERASE
is completed.
4Mb Smart 3 Boot Block Flash Memory
F45_1.p65 – Rev. 1/01
The MT28F004B3 and MT28F400B3 are designed
The MT28F004B3 and MT28F400B3 offer several
PP
CC
is supported for a maximum of 100
current is 100µA at 3.3V V
CC
. When CE#
PP
CC
must
CC
SMART 3 BOOT BLOCK FLASH MEMORY
) in
. If
14
POWER-UP
tions is minimized since two consecutive cycles are
required to execute either operation. However, to reset
the ISM and to provide additional protection while V
is ramping, one of the following conditions must be
met:
and the device will enter the array read mode.
Address
(3.3V)
Data
RP#
V
The likelihood of unwanted WRITE or ERASE opera-
• RP# must be held LOW until V
• CE# or WE# may be held HIGH and
After a power-up or RESET, the status register is reset,
NOTE:
CC
Power-Up/Reset Timing Diagram
Micron Technology, Inc., reserves the right to change products or specifications without notice.
functional level; or
RP# must be toggled from V
1. V
goes HIGH.
CC
Note 1
must be within the valid operating range before RP#
Figure 2
t
RWH
t
AA
VALID
CC
VALID
-GND-V
CC
©2000, Micron Technology, Inc.
is at valid
UNDEFINED
CC
4Mb
.
CC

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