MT28F004B3VG-10 TET Micron, MT28F004B3VG-10 TET Datasheet - Page 27

• Manufacturer Part Number: MT28F004B3VG-10 TET
• Description: Flash Memory, 4Mbit, Sectored, 3.3V Supply, TSOP I, 40-Pin
• Manufacturer: Micron

TIMING PARAMETERS
Commercial Temperature (0°C
Extended Temperature (-40°C
NOTE: 1. Address inputs are “Don’t Care” but must be held stable.
4Mb Smart 3 Boot Block Flash Memory
F45_1.p65 – Rev. 1/01
SYMBOL
t
t
t
t
t
t
t
t
t
t
A0-A17/(A18)
WC
WPH
WP
AS
AH
DS
DH
CS
CH
VPS1
DQ0-DQ15
DQ0-DQ7/
WP#
RP#
WE#
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit (MT28F400B3
3. Either RP# at V
OE#
CE#
V
PP
only).
2
3
3
V
V
V
V
PPH2
PPH1
PPLK
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
HH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
ERASE SETUP input
t CS
t RS
WRITE SETUP or
t WP
HH
t DS
t AS
or WP# HIGH unlocks the boot block.
MIN
200
90
20
70
70
10
70
0
0
0
Note 1
-9
CMD
in
MAX
T
T
A
A
t AH
t CH
+85°C)
t WC
t WPH
+70°C)
WE#-CONTROLLED WRITE/ERASE
MIN
t DH
100
200
30
70
80
10
70
0
0
0
WRITE or ERASE (block)
-10 ET
t DS
address asserted, and
WRITE data or ERASE
CONFIRM issued
t VPS1
t AS
t VPS2
t RHS
MAX
WRITE/ERASE CYCLE
Data-in
CMD/
A
IN
UNITS
[Unlock boot block]
[Unlock boot block]
SMART 3 BOOT BLOCK FLASH MEMORY
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t AH
[3.3V V
[3.3V V
[5V V
t DH
t WED1/2/3/4
27
PP
t WB
PP
PP
]
]
]
SYMBOL
t
t
t
t
t
t
t
t
t
t
VPS2
RS
RHS
WED1
WED2
WED3
WED4
WB
VPH
RHH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(SR7=0)
Status
executed, status register
checked for completion
WRITE or ERASE
1,000
(SR7=1)
MIN
Status
100
200
300
300
600
200
t VPH
t RHH
6
0
0
-9
MAX
Command for next
operation issued
1,000
MIN
100
200
300
300
600
200
©2000, Micron Technology, Inc.
6
0
0
-10 ET
DON’T CARE
CMD
in
MAX
4Mb
UNITS
ms
ms
ms
ns
ns
ns
µs
ns
ns
ns