MT28F004B3VG-10 TET Micron, MT28F004B3VG-10 TET Datasheet - Page 24

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MT28F004B3VG-10 TET

Manufacturer Part Number
MT28F004B3VG-10 TET
Description
Flash Memory, 4Mbit, Sectored, 3.3V Supply, TSOP I, 40-Pin
Manufacturer
Micron
Datasheet
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS
Commercial Temperature (0°C
4Mb Smart 3 Boot Block Flash Memory
F45_1.p65 – Rev. 1/01
AC CHARACTERISTICS
PARAMETER
WRITE cycle time
WE# HIGH pulse width
CE# HIGH pulse width
Address setup time to WE# or CE# HIGH
Data setup time to WE# or CE# HIGH
WE# pulse width
CE# pulse width
T
A
+70°C) and Extended Temperature (-40°C
SMART 3 BOOT BLOCK FLASH MEMORY
24
SYMBOL
t
t
WPH
t
t
CPH
t
t
t
WC
WP
AS
DS
CP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
90
20
20
70
70
70
70
-9
MAX
T
A
MIN
100
30
30
80
70
70
70
+85°C); V
-10 ET
MAX
CC
= +3.3V ±0.3V
©2000, Micron Technology, Inc.
UNITS
ns
ns
ns
ns
ns
ns
ns
4Mb
NOTES

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