mt48lc16m4a2tg Micron Semiconductor Products, mt48lc16m4a2tg Datasheet - Page 45

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mt48lc16m4a2tg

Manufacturer Part Number
mt48lc16m4a2tg
Description
64mb X4, X8, X16 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet

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DQML, DQMH
TIMING PARAMETERS
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2.
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
SYMBOL* MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
t
t
t
t
t
t
t
t
t
AC(3)
AC(2)
AH
AS
CH
CL
CK(3)
CK(2)
CKH
CKS
COMMAND
A0-A9, A11
BA0, BA1
DQM /
CLK
A10
CKE
DQ
2. x16: A8, A9 and A11 = “Don’t Care”
1.5
2.5
2.5
1.5
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t CMS
1
6
1
t CKS
t AS
t AS
t AS
-6
ACTIVE
BANK 0
T0
ROW
ROW
5.5
t CKH
t CMH
t AH
t AH
t AH
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
0.8
1.5
2.5
2.5
7.5
0.8
1.5
7
-7E
t CK
T1
5.4
5.4
NOP
ENABLE AUTO PRECHARGE
0.8
1.5
2.5
2.5
7.5
0.8
1.5
10
ALTERNATING BANK READ ACCESSES
-75
t CMS
t CL
COLUMN m 2
5.4
BANK 0
6
T2
READ
t CMH
t CH
CAS Latency - BANK 0
10
1
2
3
3
8
1
2
-8E
6
6
T3
NOP
t LZ
ns
t AC
ns
ns
ns
ns
ns
ns
ns
ns
ns
45
BANK 3
ACTIVE
T4
ROW
ROW
D
OUT
t OH
SYMBOL* MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
t
t
t
t
t
t
t
t
t AC
m
CMH
CMS
LZ
OH
RAS
RC
RCD
R P
RRD
t RCD - BANK 3
D
T5
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
1.5
42 120,000
60
18
18
12
m + 1
1
1
2
t OH
t AC
-6
ENABLE AUTO PRECHARGE
COLUMN b 2
BANK 3
D
T6
OUT
READ
0.8
1.5
37 120,000
60
15
15
14
1
3
m + 2
1
t OH
-7E
t AC
64Mb: x4, x8, x16
CAS Latency - BANK 3
t RP - BANK 0
D
0.8
1.5
44 120,000
66
20
20
15
T7
OUT
1
3
NOP
-75
m + 3
t OH
t AC
©2003, Micron Technology, Inc.
SDRAM
50 120,000
70
20
20
20
1
2
1
3
BANK 0
T8
-8E
ACTIVE
ROW
ROW
DON’T CARE
UNDEFINED
D
OUT
t RCD - BANK 0
t OH
t AC
b
ns
ns
ns
ns
ns
ns
ns
ns
ns

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