mc68hc908jb16 Freescale Semiconductor, Inc, mc68hc908jb16 Datasheet - Page 324

no-image

mc68hc908jb16

Manufacturer Part Number
mc68hc908jb16
Description
M68hc08 Microcontrollers Microcontroller
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mc68hc908jb16DW
Manufacturer:
FREESCALE
Quantity:
20 000
Part Number:
mc68hc908jb16DWE
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Part Number:
mc68hc908jb16FA
Manufacturer:
FREESCALE
Quantity:
1 831
Part Number:
mc68hc908jb16FA
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
mc68hc908jb16FAE
Manufacturer:
FREESCALE
Quantity:
331
Part Number:
mc68hc908jb16JDWE
Manufacturer:
FREESCALE
Quantity:
1 250
Part Number:
mc68hc908jb16JDWE
Manufacturer:
FREESCALE
Quantity:
1 250
Part Number:
mc68hc908jb16JDWE
Manufacturer:
FREESCALE
Quantity:
20 000
Company:
Part Number:
mc68hc908jb16JDWE
Quantity:
1 487
Electrical Specifications
20.14 FLASH Memory Characteristics
Technical Data
324
Notes:
RAM data retention voltage
FLASH block size
FLASH programming size
FLASH read bus clock frequency
FLASH block erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
memory.
memory.
HVEN to logic 0.
erase / program cycles.
erase / program cycles.
specified.
rcv
Read
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the cumulative high voltage programming time to the same row before next erase.
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
(8)
(6)
(7)
MErase
Erase
(Min), there is no erase-disturb, but it reduced the endurance of the FLASH
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
Electrical Specifications
t
Symbol
MErase
t
f
Erase
Read
V
t
t
t
rcv
HV
t
t
t
t
Prog
nvhl
RDR
nvh
pgs
nvs
(4)
(5)
(1)
(2)
(3)
32 k
Min
200
100
10k
10k
1.3
10
10
20
10
5
5
1
MC68HC908JB16
512
Freescale Semiconductor
64
8.4 M
Max
40
8
Cycles
Cycles
Bytes
Bytes
Years
Rev. 1.1
Unit
ms
Hz
ms
ms
µs
µs
µs
µs
µs
µs
V

Related parts for mc68hc908jb16