S9S12GN16F0VLF Freescale Semiconductor, S9S12GN16F0VLF Datasheet - Page 830

no-image

S9S12GN16F0VLF

Manufacturer Part Number
S9S12GN16F0VLF
Description
16-bit Microcontrollers - MCU 16-bit16k Flash 2k RAM
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S9S12GN16F0VLF

Rohs
yes
Core
S12
Processor Series
MC9S12G
Data Bus Width
16 bit
Maximum Clock Frequency
25 MHz
Program Memory Size
16 KB
Data Ram Size
1024 B
On-chip Adc
Yes
Operating Supply Voltage
3.13 V to 5.5 V
Operating Temperature Range
- 40 C to + 85 C
Package / Case
TSSOP-20
Mounting Style
SMD/SMT
32 KByte Flash Module (S12FTMRG32K1V1)
The FPROT register, described in
accidental program or erase. Three separate memory regions, one growing upward from global address
0x3_8000 in the Flash memory (called the lower region), one growing downward from global address
0x3_FFFF in the Flash memory (called the higher region), and the remaining addresses in the Flash
memory, can be activated for protection. The Flash memory addresses covered by these protectable regions
are shown in the P-Flash memory map. The higher address region is mainly targeted to hold the boot loader
code since it covers the vector space. Default protection settings as well as security information that allows
the MCU to restrict access to the Flash module are stored in the Flash configuration field as described in
Table
832
1
0x3FF08-0x3_FF0F form a Flash phrase and must be programmed in a single command write sequence. Each byte in
the 0x3_FF08 - 0x3_FF0B reserved field should be programmed to 0xFF.
0x3_FF08-0x3_FF0B
0x3_FF00-0x3_FF07
25-4.
Global Address
0x3_FF0C
0x3_FF0D
0x3_FF0E
0x3_FF0F
1
1
1
1
1
(Bytes)
Size
8
4
1
1
1
1
MC9S12G Family Reference Manual,
Section
Table 25-4. Flash Configuration Field
Backdoor Comparison Key
Refer to
Section 25.5.1, “Unsecuring the MCU using Backdoor Key
Reserved
P-Flash Protection byte
Refer to
EEPROM Protection byte
Refer to
Flash Nonvolatile byte
Refer to
Flash Security byte
Refer to
25.3.2.9, can be set to protect regions in the Flash memory from
Section 25.4.6.11, “Verify Backdoor Access Key
Section 25.3.2.9, “P-Flash Protection Register (FPROT)”
Section 25.3.2.10, “EEPROM Protection Register (EEPROT)”
Section 25.3.2.16, “Flash Option Register (FOPT)”
Section 25.3.2.2, “Flash Security Register (FSEC)”
.
.
Description
Rev.1.23
Command,” and
Freescale Semiconductor
Access”

Related parts for S9S12GN16F0VLF