MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 11

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 5:
Figure 4:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
Burst Definition
CAS Latency
Notes:
COMMAND
1. BL = 4 in the cases shown.
2. Shown with nominal
COMMAND
Length
Burst
2
4
8
DQS
CK#
CK#
DQS
DQ
DQ
CK
CK
A2
0
0
0
0
1
1
1
1
READ
READ
T0
T0
Column Address
Starting
1 clock
A1
A1
0
0
1
1
0
0
1
1
0
0
1
1
t
AC and nominal
CL = 2
2 clock
NOP
NOP
T1
T1
CL = 3
11
t
TRANSITIONING DATA
AC
A0
A0
A0
T1n
0
1
0
1
0
1
0
1
0
1
0
1
0
1
128Mb: 8 Meg x 16 Mobile DDR SDRAM
D
T2
OUT
NOP
n
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
T2
DSDQ.
Type = Sequential
t
AC
T2n
D
n + 1
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
T2n
OUT
Order of Accesses Within a Burst
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1
1-0
D
D
n + 2
T3
OUT
NOP
OUT
NOP
n
T3
DON’T CARE
T3n
D
n + 3
D
n + 1
T3n
OUT
OUT
©2004 Micron Technology, Inc. All rights reserved.
Register Definition
Type = Interleaved
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1
1-0