MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 43

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 9:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
(auto precharge
(auto precharge
Current State
Row active
disabled)
disabled)
Write
Read
Any
Idle
Truth Table – Current State Bank n - Command to Bank n
Notes: 1–6; notes appear below and on next page
Notes:
CS#
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKE
2. This table is bank-specific, except where noted (i.e., the current state is for a specific bank
3. Current state definitions:
4. The following states must not be interrupted by a command issued to the same bank. COM-
RAS#
the previous state was self refresh) and after
power-down).
and the commands shown are those allowed to be issued to that bank when in that state).
Exceptions are covered in the notes below.
MAND INHIBIT or NOP commands, or allowable commands to the other bank should be
issued on any clock edge occurring during these states. Allowable commands to the other
bank are determined by its current state and Table 9, and according to Table 10.
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
CAS#
H
H
H
H
H
H
X
L
L
L
L
L
L
L
L
precharge enabled:
precharge enabled:
Row activating: Starts with registration of an ACTIVE command and ends
WE#
Write w/auto-
Read w/auto-
Precharging: Starts with registration of a PRECHARGE command and ends
X
H
H
H
H
H
H
L
L
L
L
L
L
L
L
Row active: A row in the bank has been activated, and
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (truncate READ burst, start PRECHARGE)
BURST TERMINATE
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE (truncate WRITE burst, start PRECHARGE)
Write: A WRITE burst has been initiated, with auto precharge
Read: A READ burst has been initiated, with auto precharge
Idle: The bank has been precharged, and
n-1
43
met. No data bursts/accesses and no register accesses are in
progress.
disabled, and has not yet terminated or been terminated.
disabled, and has not yet terminated or been terminated.
when
state.
when
row active state.
Starts with registration of a READ command with auto
precharge enabled and ends when
t
Starts with registration of a WRITE command with auto
precharge enabled and ends when
t
RP is met, the bank will be in the idle state.
RP is met, the bank will be in the idle state.
was HIGH and CKE
128Mb: 8 Meg x 16 Mobile DDR SDRAM
t
t
RP is met. Once
RCD is met. Once
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command/Action
t
XP has been met (if the previous state was
n
is HIGH and after
t
RP is met, the bank will be in the idle
t
RCD is met, the bank will be in the
©2004 Micron Technology, Inc. All rights reserved.
t
t
RP has been met. Once
RP has been met. Once
t
RP has been met.
t
XSR has been met (if
t
RCD has been
Truth Tables
Notes
10, 12
10, 11
8, 11
10
10
10
10
7
7
8
8
9