MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 18

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-10 IT TR

Manufacturer Part Number
MT46H8M16LFCF-10 IT TR
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H8M16LFCF-10 IT TR

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SELF REFRESH
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
The SELF REFRESH command can be used to retain data in the Mobile DDR SDRAM,
even if the rest of the system is powered down. When in the self refresh mode, the Mobile
DDR SDRAM retains data without external clocking. The SELF REFRESH command is
initiated like an AUTO REFRESH command except CKE is disabled (LOW). All command
and address input signals except CKE are “Don’t Care” during SELF REFRESH.
During SELF REFRESH, the device is refreshed as identified in the external mode register
(see PASR setting).
The procedure for exiting SELF REFRESH requires a sequence of commands. First, CK
must be stable prior to CKE going back HIGH. Once CKE is HIGH, the Mobile DDR
SDRAM must have NOP commands issued for
internal refresh in progress.
18
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
XSR is required for the completion of any
©2004 Micron Technology, Inc. All rights reserved.
Commands

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