MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 34

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 22:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
WRITE-to-READ – Uninterrupting
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An uninterrupted burst of 4 is shown.
3.
4. The READ and WRITE commands are to same device. However, the READ and WRITE com-
5. A10 is LOW with the WRITE command (auto precharge is disabled).
t
mands may be to different devices, in which case
mand could be applied earlier.
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b = data-in for column b; D
b
IN
NOP
D
T1
b
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
D
b+2
b+1
D
IN
IN
NOP
D
b+2
T2
IN
b+2
b+3
D
D
IN
IN
T2n
b+3
D
IN
34
b+3
D
IN
OUT
T3
NOP
t
WTR
n = data-out for column n.
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank a,
Col n
READ
T4
DON’T CARE
t
WTR is not required and the READ com-
CL = 2
CL = 2
CL = 2
T5
NOP
TRANSITIONING DATA
T5n
©2004 Micron Technology, Inc. All rights reserved.
D
D
D
OUT
OUT
n
OUT
n
n
T6
NOP
D
D
D
n+1
n+1
n+1
OUT
OUT
OUT
Operations
T6n