MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 51

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-10 IT TR

Manufacturer Part Number
MT46H8M16LFCF-10 IT TR
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H8M16LFCF-10 IT TR

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 15:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
AC Characteristics
Parameter
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Exit power-down mode to first valid command
Exit SELF REFRESH to first valid command
Electrical Characteristics and Recommended AC Operating Conditions (continued)
Notes: 1–6, 27; notes appear on pages 52–54; V
CL = 3
CL = 2
Symbol
t
t
t
RPRE(3)
RPRE(2)
t
WPRES
t
t
WPRE
t
t
WPST
t
RPST
t
WTR
RRD
t
XSR
WR
XP
51
DD
Q = +1.8V ±0.1V, V
Min
0.25
120
0.9
0.5
0.4
0.4
8.8
15
15
0
1
128Mb: 8 Meg x 16 Mobile DDR SDRAM
-75
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Max
1.1
1.1
0.6
0.6
DD
Min
0.25
120
0.9
0.5
0.4
0.4
= +1.8V ±0.1V
15
15
25
0
1
Electrical Specifications
-10
Max
1.1
1.1
0.6
0.6
©2004 Micron Technology, Inc. All rights reserved.
Units
t
t
t
t
t
t
ns
ns
ns
CK
CK
CK
CK
ns
CK
CK
ns
Notes
17, 18
33
33
16
41
40

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