NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 44

• Manufacturer Part Number: NAND01GW4B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW4B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (64M x 16)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Program and Erase Times and Endurance cycles
9
44/64
Program and Erase Times and Endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in
Table 18.
Page Program Time
Block Erase Time
Program/Erase Cycles (per block)
Data Retention
Table
Program, Erase Times and Program Erase Endurance Cycles
Parameters
18.
100,000
Min
10
NAND Flash
Typ
300
2
NAND01G-B, NAND02G-B
Max
700
3
cycles
years
Unit
ms
µs