NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 62

• Manufacturer Part Number: NAND01GW4B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW4B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (64M x 16)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Part numbering
13
62/64
Part numbering
Table 29.
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to
’1’. For further information on any aspect of this device, please contact your nearest ST
Sales Office.
Example:
Device Type
NAND Flash Memory
Density
01G = 1Gb
02G = 2Gb
Operating Voltage
R = V
W = V
Bus Width
3 = x8
4 = x16
Family Identifier
B = 2112 Bytes/ 1056 Word Page
Device Options
2 = Chip Enable Don't Care Enabled
Product Version
A = First Version
B= Second Version
C= Third Version
Package
N = TSOP48 12 x 20mm (all devices)
ZA = VFBGA63 9.5 x 12 x 1mm, 0.8mm pitch (1Gb devices)
ZB = TFBGA63 9.5 x 12 x 1.2mm, 0.8mm pitch (2Gb Dual Die devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
DD
DD
= 1.7 to 1.95V
= 2.7 to 3.6V
Ordering Information Scheme
NAND02GR3B
NAND01G-B, NAND02G-B
2
A N
6
E