NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 45

• Manufacturer Part Number: NAND01GW4B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW4B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (64M x 16)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND01G-B, NAND02G-B
10
Maximum rating
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 19.
1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
Symbol
T
V
T
V
BIAS
IO
STG
DD
(1)
Absolute Maximum Ratings
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Parameter
DD
+ 2V for less than 20ns during transitions on I/O pins.
1.8V devices
1.8V devices
3 V devices
3 V devices
Table 19: Absolute Maximum
– 0.6
– 0.6
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
125
150
2.7
4.6
2.7
4.6
Maximum rating
Ratings, may
Unit
°C
°C
V
V
V
V
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