NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 57

• Manufacturer Part Number: NAND01GW4B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW4B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (64M x 16)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND01G-B, NAND02G-B
11.1
Ready/Busy Signal electrical characteristics
Figure
signal. The value required for the resistor R
So,
where I
max is determined by the maximum value of t
Figure 33. Ready/Busy AC Waveform
Figure 34. Ready/Busy Load Circuit
34,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 33
and
Figure 35
ready V DD
DEVICE
V SS
V DD
R P min
R P min 1.8V
R P min 3V
show the electrical characteristics for the Ready/Busy
=
t f
------------------------------------------------------------ -
V DDmax V OLmax
V OL
P
=
I OL
=
can be calculated using the following equation:
busy
r
-------------------------- -
8mA
R P
.
-------------------------- -
3mA
–
Open Drain Output
3.2V
+
RB
1.85V
+
I L
+
I L
I L
t r
ibusy
V OH
AI07564B
AI07563B
DC And AC parameters
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P