NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 60

IC FLASH 1GBIT 48TSOP

NAND01GW4B2AN6E

Manufacturer Part Number
NAND01GW4B2AN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of NAND01GW4B2AN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (64M x 16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GW4B2AN6E
Manufacturer:
ST
0
Package mechanical
Figure 38. VFBGA63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, Package Outline
1. Drawing is not to scale
Table 27.
60/64
Symbol
FD1
FE1
ddd
FD
SD
SE
A1
A2
D1
D2
E1
E2
FE
A
D
E
b
e
VFBGA63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, Package Mechanical Data
12.00
0.45
9.50
4.00
7.20
5.60
8.80
0.80
2.75
1.15
3.20
1.60
0.40
0.40
Typ
E
E2
E1
millimeters
BALL "A1"
FD1
FD
e
11.90
A
0.25
0.40
9.40
Min
e
D2
D1
SD
D
12.10
Max
1.05
0.70
0.50
9.60
0.10
b
FE1
A1
e
SE
A2
0.0177
0.3740
0.1575
0.2835
0.4724
0.2205
0.3465
0.0315
0.1083
0.0453
0.1260
0.0630
0.0157
0.0157
FE
Typ
BGA-Z67
ddd
NAND01G-B, NAND02G-B
inches
0.0098
0.0157
0.3701
0.4685
Min
0.0413
0.0276
0.0197
0.3780
0.0039
0.4764
Max

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