NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 60

• Manufacturer Part Number: NAND01GW4B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW4B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (64M x 16)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Package mechanical
Figure 38. VFBGA63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, Package Outline
1. Drawing is not to scale
Table 27.
60/64
Symbol
FD1
FE1
ddd
FD
SD
SE
A1
A2
D1
D2
E1
E2
FE
A
D
E
b
e
VFBGA63 9.5x12mm - 6x8 active ball array, 0.80mm pitch, Package Mechanical Data
12.00
0.45
9.50
4.00
7.20
5.60
8.80
0.80
2.75
1.15
3.20
1.60
0.40
0.40
Typ
E
E2
E1
millimeters
BALL "A1"
FD1
FD
e
11.90
A
0.25
0.40
9.40
Min
–
e
D2
D1
SD
D
12.10
Max
1.05
0.70
0.50
9.60
0.10
–
b
FE1
A1
e
SE
A2
0.0177
0.3740
0.1575
0.2835
0.4724
0.2205
0.3465
0.0315
0.1083
0.0453
0.1260
0.0630
0.0157
0.0157
FE
Typ
BGA-Z67
ddd
NAND01G-B, NAND02G-B
inches
0.0098
0.0157
0.3701
0.4685
Min
–
0.0413
0.0276
0.0197
0.3780
0.0039
0.4764
Max
–