NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 50

• Manufacturer Part Number: NAND01GW4B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW4B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (64M x 16)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

DC And AC parameters
Table 25.
1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See
2. To break the sequential read cycle, E must be held High for longer than t
3. ES = Electronic Signature.
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Symbol
t
t
t
t
t
t
t
t
T
T
t
t
ALLRL1
ALLRL2
WHBH1
t
t
t
t
t
t
t
t
t
t
BLBH1
BLBH2
BLBH3
BLBH4
BLBH5
t
CLLRL
WHBH
WHBL
WHRL
WLWL
EHQZ
RHRL
RLRH
RLQV
BHRL
DZRL
ELQV
RLRL
EHQX
RHQX
Figure
35.
Symbol
t
t
t
t
PROG
t
t
t
t
BERS
CBSY
t
t
T
Alt.
t
WHR
t
t
t
AC Characteristics for Operations
t
RST
CLR
CHZ
CEA
REH
t
REA
t
WB
WC
RR
RC
t
AR
RP
IR
OH
R
Address Latch Low to
Read Enable Low
Ready/Busy High to Read Enable Low
Ready/Busy Low to
Ready/Busy High
Write Enable High to
Ready/Busy High
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to
Read Enable Low
Chip Enable high or Read Enable high to Output Hold
Read Enable Low to
Read Enable High
Read Enable Low to
Read Enable Low
Read Enable Low to
Output Valid
Write Enable High to
Ready/Busy High
Write Enable High to Ready/Busy Low
Write Enable High to Read Enable Low
Write Enable Low to
Write Enable Low
Read Electronic Signature
Read cycle
Read Busy time
Program Busy time
Erase Busy time
Reset Busy time, during ready
Cache Busy time
Reset Busy time, during read
Reset Busy time, during program
Reset Busy time, during erase
Read Enable High Hold time
Read Enable Pulse Width
Read Cycle time
Read Enable Access time
Read ES Access time
Read Busy time
Write Cycle time
Parameter
(1)(2)
(3)
EHEL
.
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
NAND01G-B, NAND02G-B
Figure
Devices
1.8V
700
700
500
100
10
10
20
25
10
10
20
45
20
15
25
60
35
25
60
60
3
5
3
5
0
33,
Figure 34
Devices
700
700
500
100
3V
10
10
20
25
10
10
20
45
20
15
25
50
35
25
60
50
3
5
3
5
0
and
Unit
ms
ns
ns
ns
µs
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns