NAND01GW4B2AN6E STMicroelectronics, NAND01GW4B2AN6E Datasheet - Page 48

• Manufacturer Part Number: NAND01GW4B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW4B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (64M x 16)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

DC And AC parameters
Table 23.
1. Leakage current and standby current double in stacked devices
48/64
I
Symbol
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
V
DC Characteristics, 3V Devices
DD
Standby Current (CMOS)
Output Leakage Current
Parameter
Output High Voltage Level
Output Low Voltage Level
Output Low Current (RB)
Operating
Input Leakage Current
Standby current (TTL)
Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Sequential
Program
Erase
Read
(1)
(1)
(1)
(1)
V
E=V
E=V
V
OUT
Test Conditions
IN
t
RLRL
I
I
OH
E=V
= 0 to V
WP=0/V
V
OL
IL,
IH
= 0 to V
OL
, WP=0/V
I
= -400µA
= 2.1mA
OUT
minimum
DD
= 0.4V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
DD
0.8V
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
DD
NAND01G-B, NAND02G-B
Typ
15
15
15
10
10
-
-
-
-
-
-
-
V
0.2V
DD
Max
±10
±10
0.4
1.7
30
30
30
50
1
-
+0.3
DD
Unit
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V