AT91SAM9XE512-QU Atmel, AT91SAM9XE512-QU Datasheet - Page 245
![MCU ARM9 512K FLASH 208-PQFP](/photos/6/73/67311/313-208-pqfp_sml.jpg)
AT91SAM9XE512-QU
Manufacturer Part Number
AT91SAM9XE512-QU
Description
MCU ARM9 512K FLASH 208-PQFP
Manufacturer
Atmel
Series
AT91SAMr
Datasheet
1.AT91SAM9XE128-QU.pdf
(860 pages)
Specifications of AT91SAM9XE512-QU
Core Processor
ARM9
Core Size
16/32-Bit
Speed
180MHz
Connectivity
EBI/EMI, Ethernet, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
208-MQFP, 208-PQFP
Controller Family/series
AT91SAM9xxxxx
No. Of I/o's
96
Ram Memory Size
32KB
Cpu Speed
180MHz
No. Of Timers
2
Rohs Compliant
Yes
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
2-Wire, EBI, I2S, SPI, USART
Maximum Clock Frequency
180 MHz
Number Of Programmable I/os
96
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Package
208PQFP
Device Core
ARM926EJ-S
Family Name
91S
Maximum Speed
180 MHz
Operating Supply Voltage
1.8|2.5|3.3 V
For Use With
AT91SAM9XE-EK - KIT EVAL FOR AT91SAM9XEAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT91SAM9XE512-QU
Manufacturer:
VISHAY
Quantity:
40 000
Company:
Part Number:
AT91SAM9XE512-QU
Manufacturer:
Atmel
Quantity:
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- Current page: 245 of 860
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Figure 24-3. Read Burst, 32-bit SDRAM Access
6254C–ATARM–22-Jan-10
SDRAMC_A[12:0]
D[31:0]
SDWE
SDCS
(Input)
SDCK
RAS
CAS
For a single access or an incremented burst of unspecified length, the SDRAM Controller antici-
pates the next access. While the last value of the column is returned by the SDRAM Controller
on the bus, the SDRAM Controller anticipates the read to the next column and thus anticipates
the CAS latency. This reduces the effect of the CAS latency on the internal bus.
For burst access of specified length (4, 8, 16 words), access is not anticipated. This case leads
to the best performance. If the burst is broken (border, busy mode, etc.), the next access is han-
dled as an incrementing burst of unspecified length.
Row n
t
RCD
= 3
AT91SAM9XE128/256/512 Preliminary
col a
CAS = 2
col b
Dna
col c
Dnb
col d
Dnc
col e
Dnd
col f
Dne
Dnf
245
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