AT91SAM9XE512-QU Atmel, AT91SAM9XE512-QU Datasheet - Page 90
![MCU ARM9 512K FLASH 208-PQFP](/photos/6/73/67311/313-208-pqfp_sml.jpg)
AT91SAM9XE512-QU
Manufacturer Part Number
AT91SAM9XE512-QU
Description
MCU ARM9 512K FLASH 208-PQFP
Manufacturer
Atmel
Series
AT91SAMr
Datasheet
1.AT91SAM9XE128-QU.pdf
(860 pages)
Specifications of AT91SAM9XE512-QU
Core Processor
ARM9
Core Size
16/32-Bit
Speed
180MHz
Connectivity
EBI/EMI, Ethernet, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
208-MQFP, 208-PQFP
Controller Family/series
AT91SAM9xxxxx
No. Of I/o's
96
Ram Memory Size
32KB
Cpu Speed
180MHz
No. Of Timers
2
Rohs Compliant
Yes
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
2-Wire, EBI, I2S, SPI, USART
Maximum Clock Frequency
180 MHz
Number Of Programmable I/os
96
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Package
208PQFP
Device Core
ARM926EJ-S
Family Name
91S
Maximum Speed
180 MHz
Operating Supply Voltage
1.8|2.5|3.3 V
For Use With
AT91SAM9XE-EK - KIT EVAL FOR AT91SAM9XEAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT91SAM9XE512-QU
Manufacturer:
VISHAY
Quantity:
40 000
Company:
Part Number:
AT91SAM9XE512-QU
Manufacturer:
Atmel
Quantity:
58
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14.2.5.2
14.2.5.3
90
AT91SAM9XE128/256/512 Preliminary
Flash Write Command
Flash Full Erase Command
Table 14-6.
This command is used to write the Flash contents.
The Flash memory plane is organized into several pages. Data to be written are stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 14-8.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
Step
n+2
n+3
...
Step
1
2
3
4
5
...
n
n+1
n+2
n+3
...
• before access to any page other than the current one
• when a new command is validated (MODE = CMDE)
Handshake Sequence
Read handshaking
Read handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Read Command
Write Command
MODE[3:0]
CMDE
ADDR0
ADDR1
DATA
DATA
...
ADDR0
ADDR1
DATA
DATA
...
MODE[3:0]
DATA
DATA
...
DATA[15:0]
WP or WPL or EWP or EWPL
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
DATA[15:0]
*Memory Address++
*Memory Address++
...
6254C–ATARM–22-Jan-10
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