AT91SAM9XE512-QU Atmel, AT91SAM9XE512-QU Datasheet - Page 59
![MCU ARM9 512K FLASH 208-PQFP](/photos/6/73/67311/313-208-pqfp_sml.jpg)
AT91SAM9XE512-QU
Manufacturer Part Number
AT91SAM9XE512-QU
Description
MCU ARM9 512K FLASH 208-PQFP
Manufacturer
Atmel
Series
AT91SAMr
Datasheet
1.AT91SAM9XE128-QU.pdf
(860 pages)
Specifications of AT91SAM9XE512-QU
Core Processor
ARM9
Core Size
16/32-Bit
Speed
180MHz
Connectivity
EBI/EMI, Ethernet, I²C, MMC, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
208-MQFP, 208-PQFP
Controller Family/series
AT91SAM9xxxxx
No. Of I/o's
96
Ram Memory Size
32KB
Cpu Speed
180MHz
No. Of Timers
2
Rohs Compliant
Yes
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
2-Wire, EBI, I2S, SPI, USART
Maximum Clock Frequency
180 MHz
Number Of Programmable I/os
96
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Package
208PQFP
Device Core
ARM926EJ-S
Family Name
91S
Maximum Speed
180 MHz
Operating Supply Voltage
1.8|2.5|3.3 V
For Use With
AT91SAM9XE-EK - KIT EVAL FOR AT91SAM9XEAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT91SAM9XE512-QU
Manufacturer:
VISHAY
Quantity:
40 000
Company:
Part Number:
AT91SAM9XE512-QU
Manufacturer:
Atmel
Quantity:
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11.6.2.2
11.6.2.3
11.6.2.4
6254C–ATARM–22-Jan-10
Write Buffer
Write-though Operation
Write-back Operation
cache line is replaced due to a linefill or a cache clean operation, the dirty bits are used to decide
whether all, half or none is written back to memory.
DCache can be enabled or disabled by writing either 1 or 0 to bit C in register 1 of CP15 (see
Tables 4-3 and 4-4 on page 4-5 in ARM926EJ-S TRM).
The DCache supports write-through and write-back cache operations, selected by memory
region using the C and B bits in the MMU translation tables.
The DCache contains an eight data word entry, single address entry write-back buffer used to
hold write-back data for cache line eviction or cleaning of dirty cache lines.
The Write Buffer can hold up to 16 words of data and four separate addresses. DCache and
Write Buffer operations are closely connected as their configuration is set in each section by the
page descriptor in the MMU translation table.
The ARM926EJ-S contains a write buffer that has a 16-word data buffer and a four- address buf-
fer. The write buffer is used for all writes to a bufferable region, write-through region and write-
back region. It also allows to avoid stalling the processor when writes to external memory are
performed. When a store occurs, data is written to the write buffer at core speed (high speed).
The write buffer then completes the store to external memory at bus speed (typically slower than
the core speed). During this time, the ARM9EJ-S processor can preform other tasks.
DCache and Write Buffer support write-back and write-through memory regions, controlled by C
and B bits in each section and page descriptor within the MMU translation tables.
When a cache write hit occurs, the DCache line is updated. The updated data is then written to
the write buffer which transfers it to external memory.
When a cache write miss occurs, a line, chosen by round robin or another algorithm, is stored in
the write buffer which transfers it to external memory.
When a cache write hit occurs, the cache line or half line is marked as dirty, meaning that its
contents are not up-to-date with those in the external memory.
When a cache write miss occurs, a line, chosen by round robin or another algorithm, is stored in
the write buffer which transfers it to external memory.
AT91SAM9XE128/256/512 Preliminary
59
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