AT91SAM9R64-CU-999 Atmel, AT91SAM9R64-CU-999 Datasheet - Page 210

• Manufacturer Part Number: AT91SAM9R64-CU-999
• Description: IC MCU ARM9 64K SRAM 144LFBGA
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM9R64-CU-999

• Core Processor: ARM9
• Core Size: 16/32-Bit
• Speed: 240MHz
• Connectivity: EBI/EMI, I²C, MMC, SPI, SSC, UART/USART, USB
• Peripherals: AC'97, POR, PWM, WDT
• Number Of I /o: 49
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: ROM
• Ram Size: 72K x 8
• Voltage - Supply (vcc/vdd): 1.08 V ~ 1.32 V
• Data Converters: A/D 3x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LFBGA
• Processor Series: AT91SAMx
• Core: ARM926EJ-S
• Data Bus Width: 32 bit
• Data Ram Size: 64 KB
• Interface Type: SPI, TWI, UART
• Maximum Clock Frequency: 240 MHz
• Number Of Programmable I/os: 118
• Operating Supply Voltage: 1.65 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JTRACE-ARM-2M, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: AT91SAM-ICE, AT91-ISP, AT91SAM9RL-EK
• Minimum Operating Temperature: - 40 C
• For Use With: AT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

23.5
23.5.1
Figure 23-2. Write Burst, 32-bit SDRAM Access
210
SDRAMC_A[12:0]
Functional Description
D[31:0]
SDWE
SDCS
SDCK
AT91SAM9R64/RL64 Preliminary
RAS
CAS
SDRAM Controller Write Cycle
The SDRAM Controller allows burst access or single access. In both cases, the SDRAM control-
ler keeps track of the active row in each bank, thus maximizing performance. To initiate a burst
access, the SDRAM Controller uses the transfer type signal provided by the master requesting
the access. If the next access is a sequential write access, writing to the SDRAM device is car-
ried out. If the next access is a write-sequential access, but the current access is to a boundary
page, or if the next access is in another row, then the SDRAM Controller generates a precharge
command, activates the new row and initiates a write command. To comply with SDRAM timing
parameters, additional clock cycles are inserted between precharge/active (t
active/write (t
Configuration Register” on page
Row n
t
RCD
= 3
col a
RCD
Dna
) commands. For definition of these timing parameters, refer to the
col b
Dnb
col c
Dnc
221. This is described in
col d
Dnd
col e
Dne
col f
Dnf
col g
Dng
Figure 23-2
col h
Dnh
col i
Dni
below.
col j
Dnj
6289C–ATARM–28-May-09
RP
) commands and
col k
Dnk
“SDRAMC
col l
Dnl