D12312SVTEBL25 Renesas Electronics America, D12312SVTEBL25 Datasheet - Page 1075

• Manufacturer Part Number: D12312SVTEBL25
• Description: IC H8S MCU ROMLESS 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTEBL25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTEBL25; HD6412312SVTEBL25

FLMCR1—Flash Memory Control Register 1
Note: * Determined by the state of the FWE pin.
Flash Write Enable
Bit
Initial value
Read/Write
0
1
When a low level is input to the FWE pin (hardware-protected state)
When a high level is input to the FWE pin
Software Write Enable *
Note: * Valid for addresses H'000000 to H'03FFFF in H8S/2318 F-ZTAT,
0
1
(Valid in the H8S/2318 F-ZTAT, H8S/2317 F-ZTAT, H8S/2315 F-ZTAT,
Writes disabled
Writes enabled
[Setting condition]
When FWE = 1
:
:
:
H'000000 to H'01FFFF in H8S/2317 F-ZTAT, and H'000000 to
H'05FFFF in H8S/2315 F-ZTAT and H8S/2314 F-ZTAT.
FWE
1/0
7
R
*
SWE
R/W
6
0
Erase Setup *
Note: * Valid for addresses H'000000 to H'03FFFF in H8S/2318 F-ZTAT,
0
1
ESU
R/W
Erase setup cleared
Erase setup
[Setting condition]
When FWE = 1 and SWE = 1
5
0
Note: * Valid for addresses H'000000 to H'03FFFF in H8S/2318 F-ZTAT,
Program Setup *
0
1
H'000000 to H'01FFFF in H8S/2317 F-ZTAT, and H'000000 to
H'05FFFF in H8S/2315 F-ZTAT and H8S/2314 F-ZTAT.
Note: * Valid for addresses H'000000 to H'03FFFF in H8S/2318 F-ZTAT,
Erase-Verify *
0
1
Program setup cleared
Program setup
[Setting condition]
When FWE = 1 and SWE = 1
PSU
R/W
Program-Verify *
Note: * Valid for addresses H'000000 to H'03FFFF in H8S/2318 F-ZTAT,
4
0
Erase-verify mode cleared
Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
0
1
H'000000 to H'01FFFF in H8S/2317 F-ZTAT, and H'000000 to
H'05FFFF in H8S/2315 F-ZTAT and H8S/2314 F-ZTAT.
Erase *
Note: * Valid for addresses H'000000 to H'03FFFF in H8S/2318 F-ZTAT,
0
1
Program-verify mode cleared
Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
H'000000 to H'01FFFF in H8S/2317 F-ZTAT, and H'000000 to
H'05FFFF in H8S/2315 F-ZTAT and H8S/2314 F-ZTAT.
Program *
Note: * Valid for addresses H'000000 to H'03FFFF in H8S/2318 F-ZTAT,
Erase mode cleared
Transition to erase mode
[Setting condition]
When FWE = 1, SWE = 1, and ESU = 1
0
1
R/W
H'000000 to H'01FFFF in H8S/2317 F-ZTAT, and H'000000 to
H'05FFFF in H8S/2315 F-ZTAT and H8S/2314 F-ZTAT.
EV
3
0
Transition to program mode
Program mode cleared
[Setting condition]
When FWE = 1, SWE = 1, and PSU = 1
H'000000 to H'01FFFF in H8S/2317 F-ZTAT, and H'000000 to
H'05FFFF in H8S/2315 F-ZTAT and H8S/2314 F-ZTAT.
H'000000 to H'01FFFF in H8S/2317 F-ZTAT, and H'000000 to
H'05FFFF in H8S/2315 F-ZTAT and H8S/2314 F-ZTAT.
Rev.7.00 Feb. 14, 2007 page 1041 of 1108
H'FFC8
R/W
PV
2
0
R/W
E
1
0
Appendix B Internal I/O Registers
R/W
and H8S/2314 F-ZTAT only)
0
P
0
REJ09B0089-0700
Flash Memory