IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 11

• Manufacturer Part Number: IGB15N60T
• Description: IGBT,600V,15A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB15N60T

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
11
TrenchStop
®
Series
i,v
p(t)
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
di /dt
1
r
F
I
1
r r m
IGB15N60T
r
2
2
r
t
2
S
Q
Q =Q
t =t
r r
S
r r
Rev. 2.4 Oct. 07
t
r r
S
Q
S
+
90% I
F
+
t
F
Q
t
F
=60nH
=40pF.
F
r r m
r
di
10% I
n
n
r r
r
n
/dt
r r m
q
V
T
t
R
C