IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 9

• Manufacturer Part Number: IGB15N60T
• Description: IGBT,600V,15A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB15N60T

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A

Power Semiconductors
Figure 21. IGBT transient thermal resistance
10
10
10
-1
-2
0
K/W
K/W
K/W
1µs
D =0.5
0.1
0.2
(D = t
10µs 100µs 1ms
t
p
P
,
/ T)
0.02
0.01
PULSE WIDTH
single pulse
0.05
R
0.13265
0.37007
0.30032
0.34701
R , ( K / W )
1
C
1
=
1
/R
10ms 100ms
1
C
5.67*10
1.558*10
2.147*10
2.724*10
2
=
, ( s )
2
/R
R
2
-2
2
-2
-3
-4
9
TrenchStop
®
Series
IGB15N60T
Rev. 2.4 Oct. 07
q