IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 3

• Manufacturer Part Number: IGB15N60T
• Description: IGBT,600V,15A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB15N60T

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
1)
2)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E.
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
j
j
=25 C
=175 C
3
TrenchStop
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
j
j
C C
G E
C C
G E
G
G
=2 5 C ,
=1 7 5 C,
1 )
1 )
1 )
1 )
= 15 ,
= 1 5
= 40 0 V, I
= 0 /1 5 V,
= 40 0 V, I
= 0/ 15 V ,
=1 5 4n H,
=1 5 4n H,
= 3 9p F
= 3 9p F
Conditions
Conditions
®
C
C
= 1 5 A,
= 1 5 A,
Series
2)
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGB15N60T
Value
Value
Typ.
Typ.
0.22
0.35
0.57
0.34
0.47
0.81
188
212
17
11
50
17
15
79
Rev. 2.4 Oct. 07
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
Unit
ns
mJ
q