IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 6

• Manufacturer Part Number: IGB15N60T
• Description: IGBT,600V,15A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB15N60T

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A

Power Semiconductors
100ns
Figure 9. Typical switching times as a
100ns
Figure 11. Typical switching times as a
10ns
10ns
1ns
25°C
0A
t
d(on)
t
r
t
T
d(on)
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
50°C
J
5A
I
CE
GE
t
,
C
r
,
JUNCTION TEMPERATURE
= 400V, V
= 0/15V, I
COLLECTOR CURRENT
75°C
10A
C
GE
100°C 125°C 15 0°C
15A
= 15A, R
= 0/15V, R
J
CE
=175°C,
= 400V,
20A
G
=15Ω,
G
= 15Ω,
2 5A
t
t
d(off)
d(off)
t
t
6
TrenchStop
f
f
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100ns
7V
6V
5V
4V
3V
2V
1V
0V
10ns
-50°C
®
Series
m in.
t
d(on)
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
T
C
CE
J
,
0°C
= 0.21mA)
= 400V, V
JUNCTION TEMPERATURE
R
G
typ.
,
GATE RESISTOR
50°C
GE
IGB15N60T
m ax.
= 0/15V, I
J
= 175°C,
100°C
Rev. 2.4 Oct. 07
C
= 15A,
150°C
t
d(off)
t
f
t
q
r