IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 8

• Manufacturer Part Number: IGB15N60T
• Description: IGBT,600V,15A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB15N60T

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A

Power Semiconductors
Figure 17. Typical gate charge
Figure 19. Typical short circuit collector
200A
150A
100A
15V
10V
5V
0V
50A
0A
0nC
12V
V
(I
current as a function of gate-
emitter voltage
(V
GE
20nC
C
CE
=15 A)
,
GATE
Q
14V
GE
400V, T
,
40nC
-
GATE CHARGE
EMITTETR VOLTAGE
120V
j
16V
60nC
150 C)
80nC
480V
18V
100nC
8
TrenchStop
Figure 18. Typical capacitance as a function
Figure 20. Short circuit withstand time as a
12µs
10µs
100pF
8µs
6µs
4µs
2µs
0µs
10pF
1nF
10V
®
0V
V
Series
CE
V
of collector-emitter voltage
(V
function of gate-emitter voltage
(V
T
,
GE
Jmax
COLLECTOR
10V
GE
11V
CE
,
=600V, start at T
=0V, f = 1 MHz)
GATE
<150°C)
20V
-
EMITETR VOLTAGE
12V
-
EMITTER VOLTAGE
IGB15N60T
30V
13V
J
=25°C,
Rev. 2.4 Oct. 07
40V
14V
50V
C
C
C
oss
rss
iss
q