IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 7

IGBT,600V,15A,TO263

IGB15N60T

Manufacturer Part Number
IGB15N60T
Description
IGBT,600V,15A,TO263
Manufacturer
Infineon Technologies
Datasheet

Specifications of IGB15N60T

Transistor Type
IGBT
Dc Collector Current
15A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
130W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-263
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
30.0 A
Ic(max) @ 100°
15.0 A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGB15N60T
Manufacturer:
INFINEON
Quantity:
12 500
Power Semiconductors
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
1 .6m J
1 .2m J
0 .8m J
0 .4m J
0 .0m J
0.9mJ
0.8mJ
0.7mJ
0.6mJ
0.5mJ
0.4mJ
0.3mJ
0.2mJ
25°C
0 A
E
E
E
on
ts
*) E
off
*) E
*
*
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
d u e to d io de re c ov e ry
due to diode recovery
50°C
J
I
CE
on
GE
5 A
,
on
C
,
JUNCTION TEMPERATURE
and E
= 400V, V
an d E
= 0/15V, I
COLLECTOR CURRENT
75°C 100°C 125°C 150°C
1 0 A
ts
ts
include losses
in c lu d e lo s s es
C
GE
1 5A
= 15A, R
= 0/15V, R
J
CE
= 175°C,
= 400V,
20 A
G
= 15Ω,
G
= 15Ω,
25 A
E
E
E
7
TrenchStop
ts
on
off
*
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
1.6 mJ
1.4 mJ
1.2 mJ
1.0 mJ
0.8 mJ
0.6 mJ
0.4 mJ
0.2 mJ
1.2m J
1.0m J
0.8m J
0.6m J
0.4m J
0.2m J
0.0m J
300V
®
V
E
E
Series
E
CE
ts
off
on
*) E
*) E
*
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
*
,
due to diode recovery
E
due to diode recovery
CE
COLLECTOR
GE
off
on
on
= 400V, V
= 0/15V, I
R
E
and E
and E
350V
G
on
,
*
GATE RESISTOR
ts
ts
include losses
include losses
-
EMITTER VOLTAGE
C
GE
IGB15N60T
400V
= 15A, R
= 0/15V, I
J
J
= 175°C,
= 175°C,
Rev. 2.4 Oct. 07
G
450V
= 15Ω,
C
= 15A,
E
ts
*
q

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