IGB15N60T Infineon Technologies, IGB15N60T Datasheet - Page 4

• Manufacturer Part Number: IGB15N60T
• Description: IGBT,600V,15A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB15N60T

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 130W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A

Power Semiconductors
120W
100W
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
40A
30A
20A
10A
80W
60W
40W
20W
0A
0W
10H z
25°C
50°C
switching frequency
(T
V
case temperature
(T
100H z
f,
GE
T
j
j
SWITCHING FREQUENCY
C
= 0/+15V, R
,
I
I
175 C, D = 0.5, V
175 C)
c
c
CASE TEMPERATURE
75°C
T
1kHz
C
=80°C
T
100°C 125°C 150°C
C
=110°C
G
= 15 )
10kHz
CE
= 400V,
100kHz
4
TrenchStop
Figure 2. Safe operating area
Figure 4. Collector current as a function of
0.1A
10A
30A
20A
10A
1A
0A
1V
25°C
®
V
Series
CE
(D = 0, T
V
case temperature
(V
,
COLLECTOR
GE
T
GE
=15V)
C
10V
,
CASE TEMPERATURE
15V, T
75°C
C
= 25 C, T
-
EMITTER VOLTAGE
j
IGB15N60T
100V
175 C)
DC
j
125°C
Rev. 2.4 Oct. 07
175 C;
1000V
1ms
t
10µs
10ms
50µs
p
=2µs
q