ML610Q409-NNNTBZ03A7 Rohm Semiconductor, ML610Q409-NNNTBZ03A7 Datasheet - Page 340

• Manufacturer Part Number: ML610Q409-NNNTBZ03A7
• Description: MCU 8BIT 16K FLASH 4CH 100-TQFP
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of ML610Q409-NNNTBZ03A7

• Core Processor: nX-U8/100
• Core Size: 8-Bit
• Speed: 2MHz
• Connectivity: SSP, UART/USART
• Peripherals: LCD, Melody Driver, POR, PWM, WDT
• Number Of I /o: 22
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.25 V ~ 3.6 V
• Data Converters: A/D 2x16b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 70°C
• Package / Case: 100-TFQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Chapter 24 On-chip Debug
24.3 Flash Memory Rewrite Function
Flash memory erase/write can be performed with the memory mounted on board by using the commands from the
on-chip debug emulator (uEASE). For more details on the on-chip debug emulator, see “uEASE User’s Manual”.
Table 24-2 shows the Flash memory rewrite functions.
Table 24-3 shows the conditions and specifications of Flash memory rewrite.
Note:
When performing Flash memory rewrite (erase, write), a voltage within the range from 3.0V to 3.6 V needs to be
applied to the power supply voltage V
Operating voltage
Overall-word (16K x 16 bits) write
Operating temperature
1-word (16 bits) write
Block-erase time
Chip-erase time
Random read
Rewrite count
1-word write
Block erase
Chip erase
Parameter
Function
Table 24-3 Specifications of Flash Memory Rewrite
Table 24-2 Flash Memory Rewrite Functions
V
V
V
DDL
DD
PP
DD
.
Erase of 16 Kwords (overall area)
Erase of 2 Kwords (4 Kbytes)
Write of 1 word (2 bytes)
Read of input address
Approx. 0.68s (Typ.) Approx. 1.05s (Max.)
1.5 V/2.7 V (Typ.) (Supplied from uEASE)
24-2
8 V (Typ.) (Supplied from uEASE)
(Typ.) 77ms (Max.) 100ms
(Typ.) 77ms (Max.) 100ms
(Typ.) 41μs (Max.) 64μs
Specifications
3.0V to 3.6V
0°C to 40°C
80cycles
Outline