MT29C4G48MAZAPAKD-5 IT Micron Technology Inc, MT29C4G48MAZAPAKD-5 IT Datasheet - Page 22

• Manufacturer Part Number: MT29C4G48MAZAPAKD-5 IT
• Description: MICMT29C4G48MAZAPAKD-5_IT 4G+2G MCP
• Manufacturer: Micron Technology Inc

4Gb, 8Gb: x8, x16 NAND Flash Memory
Features
PDF: 09005aef83ba4387
168ball_nand_lpddr_j42p_j4z2_j4z3_omap.pdf – Rev. H 3/11
Notes:
• Open NAND Flash Interface (ONFI) 1.0-compliant
• Single-level cell (SLC) technology
• Organization
• Asynchronous I/O performance
• Array performance
• Command set: ONFI NAND Flash Protocol
• Advanced command set
• Operation status byte provides software method for detecting
• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation com-
• WP# signal: Write protect entire device
• Blocks 0–15 (block addresses 00h–0Fh) are valid when shipped from factory with
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
• RESET (FFh) required as first command after power-on
• Alternate method of device initialization (Nand_Init) after power-up (contact factory)
• Internal data move operations supported within the plane from which data is read
• Quality and reliability
• Operating voltage range
• Operating temperature
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
–
– Read page: 25µs
– Program page: 200µs (TYP: 1.8V, 3.3V)
– Erase block: 700µs (TYP)
– Program page cache mode
– Read page cache mode
– One-time programmable (OTP) mode
– Two-plane commands
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
– Operation completion
– Pass/fail condition
– Write-protect status
pletion
ECC; for minimum required ECC, see Error Management
– Data retention: 10 years
– V
– V
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
1. The ONFI 1.0 specification is available at www.onfi.org.
t
RC/
CC
CC
: 2.7–3.6V
: 1.7–1.95V
t
WC: 20ns (3.3V), 25ns (1.8V)
168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP
2
3
3
22
3
4Gb, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
1
© 2009 Micron Technology, Inc. All rights reserved.