LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 22

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

FULL STATUS CHECK PROCEDURE
Block Erase Successful
Read Status Register
Data(See Above)
Check if Desired
Block Address
Write D0H,
Read Status
Block Erase
Read Status
Write 70H
Write 20H
Full Status
Complete
Register
SR.4,5=
Register
SR.7=
SR.7=
SR.3=
SR.1=
SR.5=
Start
1
1
0
0
0
0
0
0
1
1
1
1
Device Protect Error
Command Sequence
Block Erase
V
Block Erase Error
Suspend
No
CCW
Range Error
Error
Yes
Figure 6. Automated Block Erase Flowchart
Suspend Block
Erase Loop
Repeat for subsequent block erasures.
Full status check can be done after each block erase or after a sequence of
Write FFH after the last operation to place device in read array mode.
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register Command in cases
If error is detected, clear the Status Register before attempting retry or other error recovery.
Operation
Operation
where multiple blocks are erased before full status is checked.
Standby
block erasures.
Standby
Standby
Standby
Standby
Standby
Write
Read
Write
Write
Read
Bus
Bus
Read Status
Erase Setup
Command
Command
Confirm
Register
Erase
Status Register Data
Check SR.7
1=WSM Ready
0=WSM Busy
Check SR.4,5
Both 1=Command Sequence Error
Data=70H
Addr=X
Status Register Data
Check SR.7
1=WSM Ready
0=WSM Busy
Data=20H
Addr=X
Data=D0H
Addr=Within Block to be Erased
Check SR.3
1=V
Check SR.1
1=Device Protect Detect
Check SR.5
1=Block Erase Error
CCW
Error Detect
Comments
Comments
Rev. 1.27