LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 36

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

6.2.4 AC Characteristics - Read-Only Operations
NOTES:
1. See AC Input/Output Reference Waveform for maximum allowable input slew rate.
2. OE# may be delayed up to t
3. Sampled, not 100% tested.
4. If BYTE# transfer during reading cycle, exist the regulations separately.
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
PHQV
GLQV
ELQX
EHQZ
GLQX
GHQZ
OH
FVQV
FLQZ
ELFV
Sym.
Read Cycle Time
Address to Output Delay
CE# to Output Delay
RP# High to Output Delay
OE# to Output Delay
CE# to Output in Low Z
CE# High to Output in High Z
OE# to Output in Low Z
OE# High to Output in High Z
Output Hold from Address, CE# or OE# Change, Whichever
Occurs First
BYTE# to Output Delay
BYTE# Low to Output in High Z
CE# to BYTE# High or Low
ELQV
-t
GLQV
Parameter
after the falling edge of CE# without impact on t
V
CC
=2.7V-3.6V, T
(1)
A
=-40°C to +85°C
Notes
3,4
2
2
3
3
3
3
3
3
3
Min.
ELQV
90
0
0
0
.
Max.
600
90
90
50
55
20
90
30
5
Rev. 1.27
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns