LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 35

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
2. I
3. Includes RY/BY#.
4. Block erases, full chip erase, word/byte writes and lock-bit configurations are inhibited when V
5. The Automatic Power Savings (APS) feature is placed automatically power save mode that addresses not switching more
6. About all of pin except describe Test Conditions, CMOS level inputs are either V
7. Sampled, not 100% tested.
8. Applying 12V±0.3V to V
V
V
V
V
V
V
V
V
V
IL
IH
OL
OH1
OH2
CCWLK
CCWH1
CCWH2
LKO
Sym.
device’s current draw is the sum of I
guaranteed in the range between V
above V
than 300ns while read mode.
inputs are either V
may be connected to 12V±0.3V for a total of 80 hours maximum.
CCWS
and I
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
(TTL)
Output High Voltage
(CMOS)
V
Operations
V
Erase, Word/Byte Write or Lock-Bit
Configuration Operations
V
Erase, Word/Byte Write or Lock-Bit
Configuration Operations
V
CCWH2
CCW
CCW
CCW
CC
CCES
Lockout Voltage
Lockout during Normal
during Block Erase, Full Chip
during Block Erase, Full Chip
(max.).
are specified with the device de-selected. If read or word/byte written while in erase suspend mode, the
IL
or V
Parameter
IH
CCW
.
during erase/write can only be done for a maximum of 1000 cycles on each block. V
CCWLK
CCWS
(max.) and V
or I
DC Characteristics (Continued)
CCES
Notes
3,7
4,7
and I
7
7
7
7
8
CCWH1
CCR
Min.
0.85
V
V
11.7
or I
V
-0.5
-0.4
(min.), between V
2.0
2.4
2.7
2.0
CC
CC
CC
CCW
=2.7V-3.6V
, respectively.
Max.
+0.5
V
12.3
0.8
0.4
1.0
3.6
CC
CC
voltage and T
CCWH1
CC
±0.2V or GND±0.2V, TTL level
Unit
V
V
V
V
V
V
V
V
V
V
(max.) and V
V
I
V
I
V
I
V
I
A
OL
OH
OH
OH
CC
CC
CC
CC
=+25°C.
CCW
=2.0mA
=-2.0mA
=-2.5mA
=-100µA
=V
=V
=V
=V
Test Conditions
≤V
CCWH2
CC
CC
CC
CC
CCWLK
Min.
Min.
Min.
Min.
(min.) and
, and not
Rev. 1.27
CCW