LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 55

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

A-1.1.1 Rise and Fall Time
NOTES:
1. Sampled, not 100% tested.
2. This specification is applied for not only the device power-up but also the normal operations.
t
t
t
VR
R
F
t
R
Symbol
(Max.) and t
F
V
Input Signal Rise Time
Input Signal Fall Time
(Max.) for RP# (RST#) are 20 s/V.
CC
Rise Time
Parameter
Notes
1, 2
1, 2
1
Min.
0.5
30000
Max.
1
1
Rev. 1.10
Unit
s/V
s/V
s/V
ii