LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 40

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

NOTES:
1. V
2. Write each setup command.
3. Write each confirm command or valid address and data.
4. Automated erase or program delay.
5. Read status register data.
6. Write Read Array command.
CC
power-up and standby.
ADDRESSES(A)
DATA(D/Q)
RY/BY#(R)
BYTE#(F)
V
(SR.7)
WE#(W)
CCW
OE#(G)
CE#(E)
WP#(S)
RP#(P)
(V)
Figure 18. AC Waveform for WE#-Controlled Write Operations
V
V
High Z
CCWH1/2
("1")
("0")
CCWLK
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IL
t
High Z
ELWL
1
t
PHWL
t
A
AVAV
2
IN
D
IN
t
t
t
WLWH
DVWH
WHWL
t
WHDX
t
t
FVWH
WHEH
t
t
AVWH
SHWH
t
VPWH
A
3
IN
D
IN
t
WHAX
t
t
WHRL
t
WHFV
WHQV1,2,3,4
t
WHGL
4
5
Valid
t
SRD
QVSL
t
QVVL
6
D
IN
Rev. 1.27