LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 56

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

A-1.2 Glitch Noises
as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure A-2 (a).
Do not input the glitch noises which are below V
See the “DC CHARACTERISTICS“ described in specifications for V
Input Signal
Input Signal
V
V
IH
IL
(Max.)
(Min.)
(a) Acceptable Glitch Noises
Figure A-2. Waveform for Glitch Noises
IH
(Min.) or above V
Input Signal
Input Signal
IL
IH
V
V
(Max.) on address, data, reset, and control signals,
IH
IL
(Min.) and V
(Max.)
(Min.)
(b)
NOT
IL
Acceptable Glitch Noises
(Max.).
Rev. 1.10
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