LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 54

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

A-1 RECOMMENDED OPERATING CONDITIONS
A-1.1 At Device Power-Up
If the timing in the figure is ignored, the device may not operate correctly.
described in specifications for the supply voltage range, the operating temperature and the AC specifications not shown in
the next page.
*1 t
*2 To prevent the unwanted writes, system designers should consider the V
AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at device power-up.
For the AC specifications t
ADDRESS
V
(V
DATA
See the application note AP-007-SW-E for details.
to GND during read operations and V
(RST#)
5VPH
CCW
WE#
PP
CE#
WP#
V
RP#
OE#
)
CC
*2
for the device in 5V operations.
(W)
(D/Q)
(V)
(G)
(E)
(P)
(S)
(A)
V
V
(V
GND
CC
GND
CCWH1/2
V
V
V
V
V
V
V
V
V
V
V
PPH1/2
V
V
V
(min)
OH
OL
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
)
VR
, t
R
, t
t
VR
F
Figure A-1. AC Timing at Device Power-Up
in the figure, refer to the next page. See the “ELECTRICAL SPECIFICATIONS“
CCWH1/2
t
2VPH
(V
*1
PPH1/2
t
High Z
R
) during write or erase operations.
t
R
or
t
F
t
PHQV
CCW
t
F
t
AVQV
(V
PP
Address
t
Valid
) switch, which connects V
F
t
ELQV
t
GLQV
Output
Valid
t
t
t
R
Rev. 1.10
R
R
CCW
or
t
F
(V
i
PP
)