LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 26

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Word/Byte Write Resumed
Read Array Data
Status Register
Write D0H
Write B0H
Write FFH
Reading
SR.7=
SR.2=
Read
Done
Start
1
1
Yes
0
0
No
Word/Byte Write Completed
Read Array Data
Write FFH
Figure 10. Word/Byte Write Suspend/Resume Flowchart
Operation
Standby
Standby
Write
Write
Write
Read
Read
Bus
Word/Byte Write
Word/Byte Write
Read Array
Command
Suspend
Resume
Data=B0H
Addr=X
Status Register Data
Addr=X
Check SR.7
1=WSM Ready
0=WSM Busy
Check SR.2
1=Word/Byte Write Suspended
0=Word/Byte Write Completed
Data=FFH
Addr=X
Read Array locations other
than that being written.
Data=D0H
Addr=X
Comments
Rev. 1.27