LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 25

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Read Array Data
Read
Block Erase Resumed
Status Register
Word/Byte
Write B0H
Write D0H
Read or
Write ?
SR.7=
SR.6=
Done?
Read
Start
1
1
Yes
No
Word/Byte Write Loop
Word/Byte Write
0
0
Figure 9. Block Erase Suspend/Resume Flowchart
Block Erase Completed
Read Array Data
Write FFH
Operation
Standby
Standby
Write
Write
Read
Bus
Command
Suspend
Resume
Erase
Erase
Check SR.6
1=Block Erase Suspended
0=Block Erase Completed
Data=D0H
Addr=X
Data=B0H
Addr=X
Status Register Data
Addr=X
Check SR.7
1=WSM Ready
0=WSM Busy
Comments
Rev. 1.27