LH28F800BJHE-PBTLT9 Sharp Microelectronics, LH28F800BJHE-PBTLT9 Datasheet - Page 42

• Manufacturer Part Number: LH28F800BJHE-PBTLT9
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8 90ns 48-Pin TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F800BJHE-PBTLT9

• Package: 48TSOP
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

NOTES:
1. V
2. Write each setup command.
3. Write each confirm command or valid address and data.
4. Automated erase or program delay.
5. Read status register data.
6. Write Read Array command.
CC
power-up and standby.
ADDRESSES(A)
DATA(D/Q)
RY/BY#(R)
BYTE#(F)
V
(SR.7)
WE#(W)
CCW
OE#(G)
CE#(E)
WP#(S)
RP#(P)
(V)
Figure 19. AC Waveform for CE#-Controlled Write Operations
V
V
High Z
CCWH1/2
("1")
("0")
CCWLK
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OL
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
IL
High Z
t
WLEL
1
t
PHEL
t
A
AVAV
2
IN
D
IN
t
t
ELEH
DVEH
t
EHEL
t
EHDX
t
t
EHWH
FVEH
t
t
AVEH
SHEH
t
VPEH
A
3
IN
D
IN
t
EHAX
t
t
EHRL
t
EHFV
EHQV1,2,3,4
t
EHGL
4
5
Valid
t
SRD
QVSL
t
QVVL
6
D
IN
Rev. 1.27