ATtiny461A Atmel Corporation, ATtiny461A Datasheet - Page 178

• Manufacturer Part Number: ATtiny461A
• Manufacturer: Atmel Corporation

Specifications of ATtiny461A

• Flash (kbytes): 4 Kbytes
• Pin Count: 20
• Max. Operating Frequency: 20 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 8
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 16
• Ext Interrupts: 16
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 11
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 0.25
• Eeprom (bytes): 256
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8 to 5.5
• Operating Voltage (vcc): 1.8 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 6
• Input Capture Channels: 1
• Pwm Channels: 6
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

18.7.2
18.7.3
18.7.4
18.7.5
178
ATtiny261A/461A/861A
Entering Programming Mode
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The following algorithm puts the device in parallel programming mode:
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered:
The Chip Erase will erase the Flash and EEPROM memories plus lock bits. The Lock bits are
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory (see
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after
5. Wait at least 50 µs before sending a new command.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Load Command “Chip Erase”:
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
ns.
+12V has been applied to RESET, will cause the device to fail entering programming
mode.
a. Set XA1, XA0 to “10”. This enables command loading.
b. Set BS1 to “0”.
c. Set DATA to “1000 0000”. This is the command for Chip Erase.
d. Give XTAL1 a positive pulse. This loads the command.
e. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
f.
The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Wait until RDY/BSY goes high before loading a new command.
Figure 18-5
for signal waveforms):
CC
and GND.
Table 18-13 on page 177
Table 18-7 on page
171. When programming the Flash,
to “0000” and wait at least 100
8197C–AVR–05/11