mc9s08qd4 Freescale Semiconductor, Inc, mc9s08qd4 Datasheet - Page 191

• Manufacturer Part Number: mc9s08qd4
• Description: Hcs08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

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A.10 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
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Zero-Scale Error
Full-Scale Error
Quantization Error
Supply voltage for program/erase
–40°C to 125°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
Typical values assume V
only and are not tested in production.
At 4 MHz, for maximum frequency, use proportionally lower source impedance.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
Characteristic
T
T = 25°C
L
to T
H
= –40°C to + 125°C
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2
(2)
Characteristic
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
1
DDAD
3
= 5.0 V, Temp = 25°C, f
(2)
Conditions
Table A-10. ADC Characteristics (continued)
(2)
MC9S08QD4 Series MCU Data Sheet, Rev. 3
Table A-11. Flash Characteristics
ADCK
Symb
E
E
E
=1.0 MHz unless otherwise stated. Typical values are for reference
V
Symbol
ZS
FS
Q
prog/erase
V
f
t
t
t
t
t
t
FCLK
Mass
D_ret
Burst
Page
Fcyc
Read
prog
Min
—
0
0
0
0
10,000
Min
150
2.7
2.7
15
5
Typ
±1.5
±0.5
±1.0
±0.5
—
1
100,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
Max
±3.1
±0.7
±1.5
±0.5
±0.5
—
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4
Unit
LSB
LSB
LSB
Max
6.67
200
5.5
5.5
—
—
—
V
V
8 bit mode is
not truncated
ADIN
ADIN
Comment
DD
cycles
= V
= V
years
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
SSA
DDA
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