HD6412332 RENESAS [Renesas Technology Corp], HD6412332 Datasheet - Page 940

• Manufacturer Part Number: HD6412332
• Description: Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2300 Series
• Manufacturer: RENESAS [Renesas Technology Corp]

22.2.6
Table 22.21 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Programming Wait time after SWE bit setting *
Erasing
Rev.4.00 Sep. 07, 2007 Page 910 of 1210
REJ09B0245-0400
Flash Memory Characteristics
1
*
3
*
0 V, T
specifications), T
wide-range specifications)
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clearing *
Wait time after PSU bit clearing *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clearing *
Wait time after SWE bit clearing *
Maximum number of writes *
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clearing *
Wait time after ESU bit clearing *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clearing *
Wait time after SWE bit clearing *
Maximum number of erases *
6
CC
1
9
*
= 3.0 V to 3.6 V, AV
2
*
a
4
= 0°C to + 75°C (program/erase operating temperature range: regular
a
= 0°C to + 85°C (program/erase operating temperature range:
1
1
1
CC
*
*
*
1
1
1
1
1
*
4
6
4
1
1
6
1
1
1
1
= 3.0 V to 3.6 V, V
1
1
1
1
1
1
Symbol Min
t
t
N
t
x
y
z
α
β
γ
ε
η
θ
N
x
y
z
α
β
γ
ε
η
θ
N
P
E
DRP
WEC
(z1) —
(z2) —
(z3) —
—
—
100 *
10
1
50
5
5
4
2
2
100
—
1
100
—
10
10
20
2
4
100
—
7
ref
Typ
10
50
10000 *
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 3.0 V to AV
8
Max
200
1000
—
—
—
—
30
200
10
—
—
—
—
—
—
1000 *
—
—
10
—
—
—
—
—
—
100
5
Unit
128 bytes
Times
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Times
μs
μs
ms
μs
μs
μs
μs
μs
μs
ms/
ms/block
Years
Times
CC
, V
SS
= AV
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Wait for
additional
writing
Wait for
erasing time
SS
=